A. Van Deweerd: search on Z-Library

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1

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Z. Li, T. Schram, L. Pantisano, A. Stesmans, T. Conard, S. Shamuilia, V.V. Afanasiev, A. Akheyar, S. Van Elshocht, D.P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, S. De Gendt, K. De Meyer

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 307 KB

english, 2007

2

Interferential therapy for detrusor hyperreflexia in multiple sclerosis

H. Van Poppel, P. Ketelaer, A. Van Deweerd

Journal:

Year:

1985

Language:

english

File:

PDF, 592 KB

english, 1985

3

Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks

Rittersma, Z.M., Vertregt, M., Deweerd, W., van Elshocht, S., Srinivasan, P., Simoen, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 611 KB

english, 2006

4

Estimation of fixed charge densities in hafnium-silicate gate dielectrics

Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 404 KB

english, 2006

5

Xe(Cs) Mössbauer measurements on Ar, Ne, Kr, Xe, Rb, and Cs inclusions in W and Mo

Milants, K., Hendrickx, P., Verheyden, J., Barancira, T., Deweerd, W., Pattyn, H., Bukshpan, S., Vermeiren, F., Van Tendeloo, G.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 398 KB

english, 1997

6

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Z. Li, T. Schram, L. Pantisano, T. Conard, S. Van Elshocht, W. Deweerd, S. De Gendt, K. De Meyer, A. Stesmans, S. Shamuilia, V. V. Afanas’ev, A. Akheyar, D. P. Brunco, N. Yamada, P. Lehnen

Year:

2007

Language:

english

File:

PDF, 882 KB

english, 2007

7

Size distribution and magnetic behavior of lead inclusions in silicon single crystals

Milants, K., Verheyden, J., Barancira, T., Deweerd, W., Pattyn, H., Bukshpan, S., Williamson, D. L., Vermeiren, F., Van Tendeloo, G., Vlekken, C., Libbrecht, S., Van Haesendonck, C.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 455 KB

english, 1997

8

Nucleation and Growth Behavior of Atomic Layer Deposited HfO[sub 2] Films on Silicon Oxide Starting Surfaces

Nyns, L., Hall, L., Conard, T., Delabie, A., Deweerd, W., Heyns, M., Van Elshocht, S., Van Hoornick, N., Vinckier, C., De Gendt, S.

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 432 KB

english, 2006

9

Correlation of Phase Segregation and Electrical Properties of Low-Power MOSFETs with Hf-based Silicate Gate Dielectric Layers and TaN Metal Gates

Petry, Jasmine, Rittersma, Chris, Vellianitis, Georgios, Cosnier, Vincent, Conard, Thierry, Deweerd, Wim, Van Berkum, Jan G.M.

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 1.65 MB

english, 2006

10

MENC News

Petry, Jasmine, Rittersma, Chris, Vellianitis, Georgios, Cosnier, Vincent, Conard, Thierry, Deweerd, Wim, Van Berkum, Jan G.M.

Journal:

Music Educators Journal

Year:

1970

Language:

english

File:

PDF, 621 KB

english, 1970

11

Surface Preparation Techniques for the Atomic Layer Deposition of Hafnium Oxide

Nyns, Laura, Hall, Lindsey, Conard, Thierry, Delabie, Annelies, Deweerd, Wim, Heyns, Marc, Van Elshocht, Sven, Van Hoornick, Nausikaa, Vinckier, Chris, De Gendt, Stefan

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 769 KB

english, 2006